The project will develop traceable measurement capabilities for structural and chemical defect inspection in high aspect ratio (HAR) TSVs and wafer/chip bonding and thinning. The project will also develop new accurate measurement techniques for thermal and electrical materials characterisation at the nanoscale of the TSVs. Existing processed depth for 10 micrometre large vias are 200 micrometres: (image courtesy of CEA LETIi) Objectives >
